High Data Rate Transmitter Circuits

This practical guide and introduction to the design of key RF building blocks used in high data rate transmitters emphasizes CMOS circuit techniques applicable to oscillators and upconvertors.

High Data Rate Transmitter Circuits

Author: C.J. de Ranter

Publisher: Springer Science & Business Media

ISBN: 0306487136

Page: 227

View: 189

This practical guide and introduction to the design of key RF building blocks used in high data rate transmitters emphasizes CMOS circuit techniques applicable to oscillators and upconvertors. The book is written in an easily accessible manner, without losing detail on the technical side.

Low Power Millimeter Wave Transmitters for High Data Rate Applications

In: Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE, pp. 431–434 (2012) Ru, J.Z., Palattella, C., Geraedts, P., Klumperink, E., Nauta, ...

Low Power Millimeter Wave Transmitters for High Data Rate Applications

Author: Khaled Khalaf

Publisher: Springer

ISBN: 3030166538

Page: 109

View: 582

This book discusses low power techniques for millimeter wave transmitter IC. Considerations for the front-end design are followed by several implementation examples in the 60GHz band in CMOS down to 28nm technology. Additionally, the design and implementation details of digitally-modulated millimeter wave polar transmitters are presented.

High Speed Devices and Circuits with THz Applications

Featuring the contributions of leading experts from industry and academia, this pivotal work: Discusses THz sensing and imaging devices based on nano devices and materials Describes silicon on insulator (SOI) multigate nanowire field-effect ...

High Speed Devices and Circuits with THz Applications

Author: Jung Han Choi

Publisher: CRC Press

ISBN: 1466590122

Page: 261

View: 107

Presenting the cutting-edge results of new device developments and circuit implementations, High-Speed Devices and Circuits with THz Applications covers the recent advancements of nano devices for terahertz (THz) applications and the latest high-speed data rate connectivity technologies from system design to integrated circuit (IC) design, providing relevant standard activities and technical specifications. Featuring the contributions of leading experts from industry and academia, this pivotal work: Discusses THz sensing and imaging devices based on nano devices and materials Describes silicon on insulator (SOI) multigate nanowire field-effect transistors (FETs) Explains the theory underpinning nanoscale nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs), simulation methods, and their results Explores the physics of the silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), as well as commercially available SiGe HBT devices and their applications Details aspects of THz IC design using standard silicon (Si) complementary metal-oxide-semiconductor (CMOS) devices, including experimental setups for measurements, detection methods, and more An essential text for the future of high-frequency engineering, High-Speed Devices and Circuits with THz Applications offers valuable insight into emerging technologies and product possibilities that are attractive in terms of mass production and compatibility with current manufacturing facilities.

High speed Circuits for Lightwave Communications

High speed electronic circuits are key components in lightwave communications . They often dictate the bandwidth of transmission .

High speed Circuits for Lightwave Communications

Author: Keh-Chung Wang

Publisher: World Scientific

ISBN: 9789810235369

Page: 358

View: 457

High speed circuits are crucial for increasing the bandwidth of transmission and switching of voice/video/data over optical fiber networks. The ever-increasing demand for bit rates higher than those available due to the explosion of Internet traffic has driven engineers to develop integrated circuits of performance approaching 100 Gb/s. Commercial lightwave products using high speed circuits of 10 Gb/s and beyond are readily available.High Speed Circuits for Lightwave Communications presents the latest information on circuit design, measured results, applications, and product development. It covers electronic and opto-electronic circuits for transmission, receiving, and cross-point switching. These circuits were implemented with various state-of-the-art IC technologies, including Si BJT, GaAs MESFET, HEMT, HBT, as well as InP HEMT and HBT. The book, written by more than 50 experts, will benefit graduate students, researchers, and engineers who are interested in or work in this exciting and challenging field of optical communications.

High Speed Circuits for Lightwave Communications

High speed electronic circuits are key components in lightwave communications. They often dictate the bandwidth of transmission.

High Speed Circuits for Lightwave Communications

Author: Keh-Chung Wang

Publisher: World Scientific

ISBN: 9814495891

Page: 372

View: 705

High speed circuits are crucial for increasing the bandwidth of transmission and switching of voice/video/data over optical fiber networks. The ever-increasing demand for bit rates higher than those available due to the explosion of Internet traffic has driven engineers to develop integrated circuits of performance approaching 100 Gb/s. Commercial lightwave products using high speed circuits of 10 Gb/s and beyond are readily available. High Speed Circuits for Lightwave Communications presents the latest information on circuit design, measured results, applications, and product development. It covers electronic and opto-electronic circuits for transmission, receiving, and cross-point switching. These circuits were implemented with various state-of-the-art IC technologies, including Si BJT, GaAs MESFET, HEMT, HBT, as well as InP HEMT and HBT. The book, written by more than 50 experts, will benefit graduate students, researchers, and engineers who are interested in or work in this exciting and challenging field of optical communications. Contents:High Speed Circuits for Lightwave Communications (K Pedrotti)Si and SiGe Bipolar ICs for 10 to 40 Gb/s Optical-Fiber TDM Links (H-M Rein)Low Transimpedance-Fluctuation Design for 10-GHz Si-Bipolar Preamplifier in 10 Gb/s Optical Transmission Systems (T Masuda et al.)20–40-Gbit/s-Class GaAs MESFET Digital ICs for Future Optical Fiber Communications Systems (T Otsuji et al.)20–40 Gbit/s GaAs-HEMT Chip Set for Optical Data Receiver (Z Lao et al.)AlGaAs/GaAs HBT Circuits for Optical TDM Communications (K Runge et al.)High Speed Cross-Point Switches (C E Chang et al.)HBT ICs for OC-192 Equipment (J Sitch & R Surridge)Present Status and Future Prospects of High-Speed Lightwave IC's Based on InP (E Sano et al.)InP HBT ICs for 40 Gb/s Optical Links (M Mokhtari et al.)A Review of Recent Progress in InP-Based Optoelectronic Integrated Circuit Receiver Front-Ends (R H Walden)Ultrahigh fmax AlInAs/GaInAs Transferred-Substrate Heterojunction Bipolar Transistors for Integrated Circuits Applications (B Agarwal et al.) Readership: Researchers in the field of semiconductors and high speed transmission over optic fibres. Keywords:IC;Circuit;Optical-Fiber Communications;Lightwave Communications;10Gb;40Gb;OEIC;Transceiver;Crosspoint Switch;GaAs;InP

VLSI High Speed I O Circuits Problems Projects and Questions

VLSI High-Speed I/O Transmitter Circuit Operation • Transmitter Driver • Transmitter ... bandwidths, slew rates, characteristic impedances, and data rate.

VLSI High Speed I O Circuits   Problems  Projects  and Questions

Author: Hongjiang Song

Publisher: Lulu.com

ISBN: 1312058757

Page: 554

View: 433

This book is based on a collection of homework problems, design projects and sample interview questions for the VLSI High-Speed I/O Circuits class (EEE598) the author offered in the School of Engineering at Arizona State University. The materials cover various aspects of the design, analysis and application of VLSI high-speed I/O circuits. This book is intended to be used together with the VLSI High-Speed I/O Circuits textbook by the same author. It can also be used alone for the experienced readers.

High Frequency Integrated Circuits

[13] Y. -W. Chang, H. J. Kuno, and D. L. English, “High data-rate solid-state millimeter—wave transmitter module,” IEEE MTT, 23(6): 470—477, 1975.

High Frequency Integrated Circuits

Author: Sorin Voinigescu

Publisher: Cambridge University Press

ISBN: 0521873029

Page: 902

View: 586

A transistor-level, design-intensive overview of high speed and high frequency monolithic integrated circuits for wireless and broadband systems from 2 GHz to 200 GHz, this comprehensive text covers high-speed, RF, mm-wave, and optical fibre circuits using nanoscale CMOS, SiGe BiCMOS, and III-V technologies. Step-by-step design methodologies, end-of chapter problems, and practical simulation and design projects are provided, making this an ideal resource for senior undergraduate and graduate courses in circuit design. With an emphasis on device-circuit topology interaction and optimization, it gives circuit designers and students alike an in-depth understanding of device structures and process limitations affecting circuit performance.

Design of High Speed Time Interleaved Delta Sigma D A Converters

[26] A. Jerng and C. Sodini, “A wideband ∆Σ digital-RF modulator for high data rate transmitters,” IEEE J. Solid-State Circuits, vol. 42, no. 8, pp.

Design of High Speed Time Interleaved Delta Sigma D A Converters

Author: Ameya Bhide

Publisher: Linköping University Electronic Press

ISBN: 9175190176

Page: 117

View: 693

Digital-to-analog (D/A) converters (or DACs) are one the fundamental building blocks of wireless transmitters. In order to support the increasing demand for highdata-ate communication, a large bandwidth is required from the DAC. With the advances in CMOS scaling, there is an increasing trend of moving a large part of the transceiver functionality to the digital domain in order to reduce the analog complexity and allow easy reconguration for multiple radio standards. ?? DACs can t very well into this trend of digital architectures as they contain a large digital signal processing component and oer two advantages over the traditionally used Nyquist DACs. Firstly, the number of DAC unit current cells is reduced which relaxes their matching and output impedance requirements and secondly, the reconstruction lter order is reduced. Achieving a large bandwidth from ?? DACs requires a very high operating frequency of many-GHz from the digital blocks due to the oversampling involved. This can be very challenging to achieve using conventional ?? DAC architectures, even in nanometer CMOS processes. Time-interleaved ?? (TIDSM) DACs have the potential of improving the bandwidth and sampling rate by relaxing the speed of the individual channels. However, they have received only some attention over the past decade and very few previous works been reported on this topic. Hence, the aim of this dissertation is to investigate architectural and circuit techniques that can further enhance the bandwidth and sampling rate of TIDSM DACs. The rst work is an 8-GS/s interleaved ?? DAC prototype IC with 200-MHz bandwidth implemented in 65-nm CMOS. The high sampling rate is achieved by a two-channel interleaved MASH 1-1 digital ?? modulator with 3-bit output, resulting in a highly digital DAC with only seven current cells. Two-channel interleaving allows the use of a single clock for both the logic and the nal multiplexing. This requires each channel to operate at half the sampling rate i.e. 4 GHz. This is enabled by a high-speed pipelined MASH structure with robust static logic. Measurement results from the prototype show that the DAC achieves 200-MHz bandwidth, –57-dBc IM3 and 26-dB SNDR, with a power consumption of 68-mW at 1-V digital and 1.2-V analog supplies. This architecture shows good potential for use in the transmitter baseband. While a good linearity is obtained from this DAC, the SNDR is found to be limited by the testing setup for sending high-speed digital data into the prototype. The performance of a two-channel interleaved ?? DAC is found to be very sensitive to the duty-cycle of the half-rate clock. The second work analyzes this eect mathematically and presents a new closed-form expression for the SNDR loss of two-channel DACs due to the duty cycle error (DCE) for a noise transfer function (NTF) of (1 — z—1)n. It is shown that a low-order FIR lter after the modulator helps to mitigate this problem. A closed-form expression for the SNDR loss in the presence of this lter is also developed. These expressions are useful for choosing a suitable modulator and lter order for an interleaved ?? DAC in the early stage of the design process. A comparison between the FIR lter and compensation techniques for DCE mitigation is also presented. The nal work is a 11 GS/s 1.1 GHz bandwidth time-interleaved DAC prototype IC in 65-nm CMOS for the 60-GHz radio baseband. The high sampling rate is again achieved by using a two-channel interleaved MASH 1-1 architecture with a 4-bit output i.e only fteen analog current cells. The single clock architecture for the logic and the multiplexing requires each channel to operate at 5.5 GHz. To enable this, a new look-ahead technique is proposed that decouples the two channels within the modulator feedback path thereby improving the speed as compared to conventional loop-unrolling. Full speed DAC testing is enabled by an on-chip 1 Kb memory whose read path also operates at 5.5 GHz. Measurement results from the prototype show that the ?? DAC achieves >53 dB SFDR, < —49 dBc IM3 and 39 dB SNDR within a 1.1 GHz bandwidth while consuming 117 mW from 1 V digital/1.2 V analog supplies. The proposed ?? DAC can satisfy the spectral mask of the 60-GHz radio IEEE 802.11ad WiGig standard with a second order reconstruction lter.

Advanced Data Converters

[399] A. Jerng and C. G. Sodini, “A wideband digital-RF modulator for high data rate transmitters,” IEEE International Journal of Solid State Circuits, vol.

Advanced Data Converters

Author: Gabriele Manganaro

Publisher: Cambridge University Press

ISBN: 1139504746

Page:

View: 293

Need to get up to speed quickly on the latest advances in high performance data converters? Want help choosing the best architecture for your application? With everything you need to know about the key new converter architectures, this guide is for you. It presents basic principles, circuit and system design techniques and associated trade-offs, doing away with lengthy mathematical proofs and providing intuitive descriptions upfront. Everything from time-to-digital converters to comparator-based/zero-crossing ADCs is covered and each topic is introduced with a short summary of the essential basics. Practical examples describing actual chips, along with extensive comparison between architectural or circuit options, ease architecture selection and help you cut design time and engineering risk. Trade-offs, advantages and disadvantages of each option are put into perspective with a discussion of future trends, showing where this field is heading, what is driving it and what the most important unanswered questions are.

Long Distance High Bit Rate Systems

The circuit has been assembled with a high bandwidth Buried Ridge Stripe (BRS) laser to produce an 1.3 |im hybrid transmitter module. Small and large signal ...

Long Distance High Bit Rate Systems

Author: IGIC, Inc. Staff

Publisher: Information Gatekeepers Inc

ISBN: 9781568510606

Page: 333

View: 209

Fiber Optic Sources and Transmitters

However , at higher data rates , it becomes more difficult to achieve ... Figure 3 is a schematic of the transmitter circuit used to drive the LED in ...

Fiber Optic Sources and Transmitters

Author: IGIC, Inc. Staff

Publisher: Information Gatekeepers Inc

ISBN: 9781568510583

Page: 407

View: 640

High Speed Devices and Circuits with THz Applications

Now he is working on high-data-bit-rate transmitter and receiver circuits up to 100 Gb/s, relevant device active/passive modeling, and network analyzer ...

High Speed Devices and Circuits with THz Applications

Author: Jung Han Choi

Publisher: CRC Press

ISBN: 1351831577

Page: 261

View: 109

Presenting the cutting-edge results of new device developments and circuit implementations, High-Speed Devices and Circuits with THz Applications covers the recent advancements of nano devices for terahertz (THz) applications and the latest high-speed data rate connectivity technologies from system design to integrated circuit (IC) design, providing relevant standard activities and technical specifications. Featuring the contributions of leading experts from industry and academia, this pivotal work: Discusses THz sensing and imaging devices based on nano devices and materials Describes silicon on insulator (SOI) multigate nanowire field-effect transistors (FETs) Explains the theory underpinning nanoscale nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs), simulation methods, and their results Explores the physics of the silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), as well as commercially available SiGe HBT devices and their applications Details aspects of THz IC design using standard silicon (Si) complementary metal-oxide-semiconductor (CMOS) devices, including experimental setups for measurements, detection methods, and more An essential text for the future of high-frequency engineering, High-Speed Devices and Circuits with THz Applications offers valuable insight into emerging technologies and product possibilities that are attractive in terms of mass production and compatibility with current manufacturing facilities.

Wireless Transceiver Circuits

External basestation High data rate uplink Esophagus WCE Stomach Low data rate ... lead to an energy and spectral efficient high data rate transmitter.

Wireless Transceiver Circuits

Author: Woogeun Rhee

Publisher: CRC Press

ISBN: 148223436X

Page: 580

View: 494

Modern transceiver systems require diversified design aspects as various radio and sensor applications have emerged. Choosing the right architecture and understanding interference and linearity issues are important for multi-standard cellular transceivers and software-defined radios. A millimeter-wave complementary metal–oxide–semiconductor (CMOS) transceiver design for multi-Gb/s data transmission is another challenging area. Energy-efficient short-range radios for body area networks and sensor networks have recently received great attention. To meet different design requirements, gaining good system perspectives is important. Wireless Transceiver Circuits: System Perspectives and Design Aspects offers an in-depth look at integrated circuit (IC) design for modern transceiver circuits and wireless systems. Ranging in scope from system perspectives to practical circuit design for emerging wireless applications, this cutting-edge book: Provides system design considerations in modern transceiver design Covers both systems and circuits for the millimeter-wave transceiver design Introduces four energy-efficient short-range radios for biomedical and wireless connectivity applications Emphasizes key building blocks in modern transceivers and transmitters, including frequency synthesizers and digital-intensive phase modulators Featuring contributions from renowned international experts in industry and academia, Wireless Transceiver Circuits: System Perspectives and Design Aspects makes an ideal reference for engineers and researchers in the area of wireless systems and circuits.

Continuous Time Digital Front Ends for Multistandard Wireless Transmission

IEEE J Solid-State Circuits 44(10):2722–2732 Fritzin J, Svensson C, Alvandpour A (2011) A +32 dBm ... digital-RF modulator for high data rate transmitters.

Continuous Time Digital Front Ends for Multistandard Wireless Transmission

Author: Pieter A. J. Nuyts

Publisher: Springer Science & Business Media

ISBN: 3319039253

Page: 309

View: 987

This book describes the design of fully digital multistandard transmitter front-ends which can directly drive one or more switching power amplifiers, thus eliminating all other analog components. After reviewing different architectures, the authors focus on polar architectures using pulse width modulation (PWM), which are entirely based on unclocked delay lines and other continuous-time digital hardware. As a result, readers are enabled to shift accuracy concerns from the voltage domain to the time domain, to coincide with submicron CMOS technology scaling. The authors present different architectural options and compare them, based on their effect on the signal and spectrum quality. Next, a high-level theoretical analysis of two different PWM-based architectures – baseband PWM and RF PWM – is made. On the circuit level, traditional digital components and design techniques are revisited from the point of view of continuous-time digital circuits. Important design criteria are identified and different solutions are presented, along with their advantages and disadvantages. Finally, two chips designed in nanometer CMOS technologies are described, along with measurement results for validation.

Telecommunications Abstracts

A message transmitter circuit fitted in digital link equipment for operation at a very
high data rate , and provided with a circuit for detecting and handling alarms and
with a circuit for recovering the bit rate from the digital stream . A pattern ...

Telecommunications Abstracts

Author:

Publisher:

ISBN:

Page:

View: 926

Japanese Journal of Applied Physics

The transmitter circuit consists to develop high - speed interfaces between LSI
chips . Several of an H - bridge ... large power con Txdata . In the receiver circuit ,
a positive or negative pulse sumption , and data skew between the channels .

Japanese Journal of Applied Physics

Author:

Publisher:

ISBN:

Page:

View: 551

High speed Integrated Circuit Technology

the same frequency as the data rate ; i.e. a 3 - GHz clock for 3 - Gb / s data . ... Function High - Speed and High - Data - Bandwidth Transmitter and ...

High speed Integrated Circuit Technology

Author: Mark J. W. Rodwell

Publisher: World Scientific

ISBN: 9789812810014

Page: 372

View: 225

This book reviews the state of the art of very high speed digital integrated circuits. Commercial applications are in fiber optic transmission systems operating at 10, 40, and 100 Gb/s, while the military application is ADCs and DACs for microwave radar. The book contains detailed descriptions of the design, fabrication, and performance of wideband Si/SiGe-, GaAs-, and InP-based bipolar transistors. The analysis, design, and performance of high speed CMOS, silicon bipolar, and III-V digital ICs are presented in detail, with emphasis on application in optical fiber transmission and mixed signal ICs. The underlying physics and circuit design of rapid single flux quantum (RSFQ) superconducting logic circuits are reviewed, and there is extensive coverage of recent integrated circuit results in this technology. Contents: Preface (M J W Rodwell); High-Speed and High-Data-Bandwidth Transmitter and Receiver for Multi-Channel Serial Data Communication with CMOS Technology (M Fukaishi et al.); High-Performance Si and SiGe Bipolar Technologies and Circuits (M Wurzer et al.); Self-Aligned Si BJT/SiGe HBT Technology and Its Application to High-Speed Circuits (K Washio); Small-Scale InGaP/GaAs Heterojunction Bipolar Transistors for High-Speed and Low-Power Integrated-Circuit Applications (T Oka et al.); Prospects of InP-Based IC Technologies for 100-Gbit/S-Class Lightwave Communications Systems (T Enoki et al.); Scaling of InGaAs/InAlAs HBTs for High Speed Mixed-Signal and mm-Wave ICs (M J W Rodwell); Progress Toward 100 GHz Logic in InP HBT IC Technology (C H Fields et al.); Cantilevered Base InP DHBT for High Speed Digital Applications (A L Gutierrez-Aitken et al.); RSFQ Technology: Physics and Devices (P Bunyk et al.); RSFQ Technology: Circuits and Systems (D K Brock). Readership: Researchers, industrialists and academics in electrical and electronic engineering.

Components of Fiber Optic Lans

Transmitter Bandwidth With a high-speed receiver, the transmitter bandwidth ... (Insert Figure 2) Figure 3 is a schematic of the transmitter circuit used to ...

Components of Fiber Optic Lans

Author: Igi

Publisher: Information Gatekeepers Inc

ISBN: 9781568510545

Page: 157

View: 129